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Transistors
2SC2671F
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
5.00.2
Unit: mm
4.00.2
0.70.1
0.70.2 12.90.5
* Low noise figure NF * High maximum unilateral power gain GUM * High transition frequency fT
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Resistor between B and E) * Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Note) *: RBE = 1 k Symbol VCBO VCER VEBO IC PC Tj Tstg Rating 15 14 2 80 600 150 -55 to +150 Unit V V V mA mW C C
0.45+0.15 -0.1 2.5+0.6 -0.2 1 23
5.10.2
0.45+0.15 -0.1 2.5+0.6 -0.2
Features
1: Base 2: Emitter 3: Collector TO-92-B1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency Collector output capacitance (Common base, input open circuited) Foward transfer gain Maximum unilateral power gain Noise figure Second inter modulation distortion * Third inter modulation distortion * Symbol ICBO IEBO hFE fT Cob S21e2 GUM NF IM2 IM3 Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 8 V, IC = 40 mA VCE = 8 V, IC = 40 mA, f = 0.8 GHz VCB = 10 V, IE = 0, f = 1 MHz VCE = 8 V, IC = 40 mA, f = 0.8 GHz VCE = 8 V, IC = 40 mA, f = 0.8 GHz VCE = 8 V, IC = 40 mA, f = 0.8 GHz VCE = 8 V, IC = 40 mA, f1 = 200 MHz f2 = 500 MHz, VO = 100 dB/75 VCE = 8 V, IC = 40 mA, f1 = 600 MHz f2 = 500 MHz, VO = 100 dB/75 50 75 9 10 50 3.5 150 5.5 0.8 12 13 2.0 60 86 15 3.2 1.5 Min Typ Max 1 1 300 Unit A A GHz pF dB dB dB dB dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: See measurement circuit
f1 Signal generator Converter (75 ) (50 ) Mixer (75 ) f2 Signal generator Converter (75 ) (50 ) DC power supply Under test part Converter (75 ) (50 ) Spectrum analyzer
2.30.2
Publication date: March 2003
SJC00122CED
1
2SC2671F
PC Ta
0.8
60
IC VCE
IB = 400 A Ta = 25C 350 A 50
100 120
IC VBE
VCE = 8 V
Collector power dissipation PC (W)
Collector current IC (mA)
Collector current IC (mA)
0.6
300 A 40 250 A 200 A 150 A 20 100 A 50 A
80
Ta = 75C
25C
-25C
0.4
30
60
40
0.2
10
20
0
0
40
80
120
160
0
0
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 10
600
hFE IC
12
VCE = 8 V
fT I E
VCE = 8 V f = 800 MHz Ta = 25C
Forward current transfer ratio hFE
10
Transition frequency fT (GHz)
500
10
400 Ta = 75C 300 25C 200 -25C 100
8
1
6
4
0.1
Ta = 75C, 25C, -25C
2
0.01 0.1
1
10
100
0 0.1
1
10
100
0 - 0.1
-1
-10
-100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
2.4
GUM IC
Maximum unilateral power gain GUM (dB)
IE = 0 f = 1 MHz Ta = 25C
NF IC
VCE = 8 V f = 800 MHz Ta = 25C
12 VCE = 8 V (Rg = 50 ) f = 800 MHz Ta = 25C
24
2.0
20
10
1.6
16
Noise figure NF (dB)
1 10 100
8
1.2
12
6
0.8
8
4
0.4
4
2
0 0.1
1
10
100
0 0.1
0 0.1
1
10
100
Collector-base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJC00122CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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